4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
نویسندگان
چکیده
Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. also discuss rf leakage induced presence large top gate in MOS nanostructures its consequence on efficiency rf-reflectometry. These results open way to fast sensitive readout multi-gate architectures, including multi qubit platforms.
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2021
ISSN: ['2045-2322']
DOI: https://doi.org/10.1038/s41598-021-99560-x